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通过低温退火工艺以实现ａ－Ｓｉ：Ｈ膜的局部ｎ型轻掺杂，控制了固相晶化过程中的成核中心密度，获得了较大晶粒的良质多晶硅膜。有关测试结果表明：晶化过程是较均衡地沿（１１１），（２２０），（３１１）晶向进行，而按（１１１）晶向择优取向，测得晶粒粒径１μｍ，迁移率９２．７ｃｍ￣２／Ｖ·ｓ，室温暗电导率在１０￣－２—１０￣（－４）ｓ／ｃｍ之间，在８００—１０００ｎｍ波段的吸收系数为１０￣４ｃｍ￣（－１）的数量级，相应的吸收效率６０％。由吸收能谱图测得晶化膜的光学能隙宽度在１．１６—１．２２ｅＶ之间。为了进行对比，对重掺杂的ｎ￣＋ａ－Ｓｉ：Ｈ膜退火试样也作了相应的论述。
Through the low-temperature annealing process to realize the local n-type light doping of the a-Si: H film, the nucleation center density in the solid state crystallization process is controlled, and a larger grain quality polysilicon film is obtained. The test results show that the crystallization process proceeds in the (111), (220) and (311) directions relatively uniformly and the preferred orientation in the (111) orientation. The grain size is 1 μm and the mobility is 92. 7cm ~ 2 / V · s, the room temperature dark conductivity is between 10 ~ 2-10 ~ (-4) s / cm and the absorption coefficient in the 800-1000nm band is on the order of 10 ~ 4cm ~ (-1) The corresponding absorption efficiency of 60%. The optical energy gap width of the crystallized film was 1.16-1.22 eV as measured by absorption spectrum. For comparison, the annealed samples of heavily doped n ~ + a-Si: H films are also discussed.