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对以碳热还原法制备氮化硅粉体的ＳｉＯ２－Ｃ－Ｎ２系统进行化学反应热力学和动力学的分析，从而发现在氮气氛不足的条件下，这一系统的反应产物将由氮化硅变为碳化硅；在氮气充足的情况下，随着温度的升高，生成物中碳化硅的量也会逐步增加．这一分析结果通过实验得到了验证．
The chemical reaction thermodynamics and kinetics of SiO2-C-N2 system prepared by carbothermal reduction method were studied. It was found that under the condition of insufficient nitrogen atmosphere, the reaction product of this system will be changed from silicon nitride Is silicon carbide; in the case of sufficient nitrogen, as the temperature increases, the amount of silicon carbide in the product will gradually increase. The result of this analysis is verified experimentally.