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在纳米压印工艺中,对模板和压印结构的几何参数进行快速、低成本、非破坏性地准确测量具有非常重要的意义.与传统光谱椭偏仪只能改变波长和入射角2个测量条件并且在每一组测量条件下只能获得振幅比和相位差2个测量参数相比,Mueller矩阵椭偏仪可以改变波长、入射角和方位角3个测量条件,而且在每一组测量条件下都可以获得一个4×4阶Mueller矩阵共16个参数,因此可以获得更为丰富的测量信息.通过选择合适的测量条件配置,充分利用Mueller矩阵中的测量信息,有望实现更为准确的纳米结构测量.基于此,本文利用自主研制的Mueller矩阵椭偏仪对硅基光栅模板和纳米压印光刻胶光栅结构进行了测量.实验结果表明,通过对Mueller矩阵椭偏仪进行测量条件优化配置,并且在光学特性建模时考虑测量过程中出现的退偏效应,可以实现压印工艺中纳米结构线宽、线高、侧壁角以及残胶厚度等几何参数更为准确的测量,同时对于纳米压印光刻胶光栅结构还可以直接得到光斑照射区域内残胶厚度的不均匀性参数.
In the nanoimprint process, the geometric parameters of the template and the imprinted structure of the rapid, low-cost, nondestructive accurate measurement is of great significance.Compared with the traditional spectroscopic ellipsometry can only change the wavelength and angle of incidence of 2 measurements Conditions and only get the amplitude and phase difference under each set of measurement conditions compared to 2 measurement parameters, Mueller matrix ellipsometer can change the wavelength, angle of incidence and azimuth three measurement conditions, and in each group of measurement conditions You can get a total of 16 parameters of a 4 × 4 Mueller matrix, so you can get richer measurement information. By selecting the appropriate measurement conditions, and make full use of the measurement information in the Mueller matrix, is expected to achieve more accurate nano Based on this, we use the Mueller matrix ellipsometer developed by ourselves to measure the structure of silicon-based grating and nano-imprinted photoresist grating.The experimental results show that by optimizing the measurement conditions of Mueller matrix ellipsometer, , And considering the de-depolarization effect that occurs during the measurement in the modeling of the optical characteristics, it is possible to realize the nanostructure line width, line height, side wall Angle and residual glue thickness geometric parameters such as more accurate measurement, while the nano-imprint resist grating structure can be directly obtained spot exposure area adhesive thickness inhomogeneity parameters.