金属铁电半导体场效应晶体管能够用于永久性随机存取存储器,因而铁电薄膜越来越引起人们的兴趣。日本大阪大学的T.Yoshimura等最近报道,在Si衬底上沉积的YMnO_3铁电薄膜具有滞后效应、电容—电压性质及铁电极化开关特性,当降低存储单元尺寸时,能够节省电源。 Ferroelectric semiconductor field effect transistors can be used for permanent random access memory, and thus ferroelectric thin film more and more cause for interest. T. Yoshimura at Osaka University in Japan recently reported that YMnO_3 ferroelectric films deposited on Si substrates have hysteresis effects, capacitance-voltage properties, and ferroelectric polarization switching characteristics, which can save power when the memory cell size is reduced.