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用反向GD法研究了高栅压应力下的LDD nMOSFET中的损伤情况.发现这种应力下产生电流峰值随着应力时间的增大变小,峰值变小和氧化层中负陷阱电荷增大的趋势一致.峰值变小是由于应力中氧化层陷阱电子起主导作用,从而减小了漏电压的有效作用,使得产生率最大值变小.应用这种新模型定量得出了影响漏电压的等效电荷密度.
The reverse GD method was used to study the damage of LDD nMOSFETs under high gate compressive stress. It is found that the peak value of current generated under this stress decreases with increasing stress time, decreases and the negative trap charge increases in the oxide layer The smaller the peak value is due to the predominance of oxide trap electrons in the stress, which reduces the effective effect of the drain voltage and reduces the maximum generation rate.This new model is used to quantitatively determine the effect of leakage voltage Equivalent charge density.