电压效应是指材料的物理性能随外加电压变化的现象,在半导体陶瓷中这一现象是很普遍的.目前这一现象还没有定量的理论描述.本文由晶界势垒模型得到了半导体陶瓷电阻率的电压效应的定量结果,并探讨了减弱电压效应的方法.半导体陶瓷的电学性能主要是由晶界附近因电子结构不同而形成的晶界高阻层决定的,而晶界高阻层就是晶界附近的势垒层,因此晶界高阻层的电阻率可表为 The voltage effect refers to the phenomenon that the physical properties of a material change with the applied voltage, and this phenomenon is very common in semiconductor ceramics .There is no quantitative theoretical description of this phenomenon at present.This article has got the semiconductor ceramic resistance Rate of voltage effects quantitative results and to explore ways to reduce the voltage effect.Electrical properties of semiconductor ceramics mainly by the grain boundary near the formation of different electronic structure of the grain boundary high resistance layer is determined, and the grain boundary high resistance layer is The barrier layer near the grain boundary, so the resistivity of the grain boundary high resistance layer can be expressed as