引言 如双极型集成电路中加入肖特基势垒二极管(简称SBD),则由于它的箝位作用,不仅使集成电路(简称IC)的传输时间加快,而且降低其功耗。另外其反向β值特别小,故可实现大容量高速存贮器。并且,由于不必要进行全扩散,可简化制造工艺流程,提高集成电路的成品率,而且也可以把PNP晶体三极管作为集成电路的组成元件。再有SBD不存贮少数载流子,这对研制微波单片集成电路将有更大的 INTRODUCTION For example, when a Schottky barrier diode (SBD) is added to a bipolar integrated circuit, not only the transmission time of the integrated circuit (referred to as IC) is accelerated but also the power consumption thereof is reduced due to its clamping action. In addition the reverse β value is particularly small, it can achieve large-capacity high-speed memory. Moreover, since full diffusion is not necessary, the manufacturing process can be simplified, the yield of the integrated circuit can be increased, and the PNP transistor can also be used as a component of an integrated circuit. Then SBD does not store minority carriers, which will have a greater development of microwave monolithic integrated circuits