论文部分内容阅读
以熔化-旋转法制备了Cu70Zr30和Cu100-xYx(x=28,67)非晶带试样并在1~300K温度范围内测量了电阻和磁电阻随温度变化的规律.非晶Cu70Zr30电阻率ρ(T)的温度系数(TCR)在整个测量温区内都是负值,并且在两个不同的温区表现出-T1/2行为.对于类似的Cu100-xYx合金系统,在1~200K温区内也做了同类测量.在低温1~4K,两个不同的无序系统CuZr和CuY的TCR都准确地表现出-T1/2行为,这表明无序系统在极低温条件下的量子相干效应.这主要应归因于在粒子-空穴通道的电子-电子相互作用.而无序Cu70Zr30在宽广的中低温区60~300K以更大斜率表现出的-T1/2行为,可以用初始定域化理论解释.无序CuZr和CuY的低温磁电阻ρ(B,T)测量结果与定域化理论进行了拟合和讨论.
The samples of Cu70Zr30 and Cu100-xYx (x = 28,67) were prepared by melt-spin method and the change of resistance and magneto-resistance with temperature were measured in the temperature range of 1 ~ 300 K. The resistivity of amorphous Cu70Zr30 ρ (T) temperature coefficient (TCR) is negative throughout the measured temperature range and exhibits a -T1 / 2 behavior in two different temperature regions.For a similar Cu100-xYx alloy system, at temperatures of 1 to 200 K Similar measurements have also been made in the region. The TCR of CuZr and CuY in two different disordered systems accurately shows -T1 / 2 behavior at 1 ~ 4K at low temperature, indicating the quantum coherence of the disordered system at cryogenic temperatures This is mainly due to the electron-electron interaction in the particle-hole channels, whereas the disordered Cu70Zr30 exhibits a -T1 / 2 behavior at a greater slope of 60-300 K over a wide mid-low temperature region, Localization theory.The results of the measurement of the low temperature magnetoresistance ρ (B, T) of disordered CuZr and CuY were fitted and discussed with the localization theory.