离子注入是半导体器件制造中一项很重要的工艺,由于微电子工业对具有MeV级能量的离子注入的兴趣日益增长,对高能离子束的要求也日益迫切,此外,在某些应用中,需要有高达10~(18)离子/厘米~2的注入剂量,这就意谓着高能离子束必须具有大束流。对于高能、大束流这两项要求,射频linac(直线加速器)系统都可很好地满足。本文根据几种新型linac结构 Ion implantation is a very important process in the manufacture of semiconductor devices. Due to the increasing interest of the microelectronics industry for ion implantation with MeV-level energy, the demand for high-energy ion beams is also increasingly urgent. In some applications, it is necessary There are injection doses of up to 10-18 ions / cm2, which means that the high-energy ion beam must have a large beam current. For high energy, large beam of these two requirements, RF linac (linear accelerator) system can be well satisfied. This article is based on several new linac structures