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报道了一种采用 U形发射极新结构的高性能 In Ga P/ Ga As HBT.采用自对准发射极、L EU等先进工艺技术实现了特征频率达到 1 0 8GHz,最大振荡频率达到 1 4 0 GHz的频率特性 .这种新结构的 HBT的击穿电压达到 2 5 V,有利于在大功率领域应用 .而残余电压只有 1 0 5 m V,拐点电压只有 0 .5 0 V,使其更适用于低功耗应用 .同时 ,还对比了由于不同结构产生的器件性能的差异
A high-performance In Ga P / Ga As HBT with a U-shaped emitter structure was reported.Adopting self-aligned emitters, L EU and other advanced technology realized the characteristic frequency of 1 0 8GHz and the maximum oscillation frequency of 1 4 0 GHz frequency characteristics of the new structure of the HBT breakdown voltage of 25V, is conducive to the field of high-power applications while the residual voltage of only 105 mV, the inflection point voltage of only 0.50 V, making it More suitable for low-power applications.At the same time, also compared the different structure of the device performance differences