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采用脉冲激光沉积 (PLD)工艺制备了Au/PZT/BIT/p Si结构铁电存储二极管 .对该二极管的I V特性、电容保持特性、疲劳 (fatigue)特性和印迹 (imprint)特性进行了研究 .结果表明 :该铁电二极管的I V特性表现出明显的单向导电性 ,表现出类似于Schottky二极管的特性 ,电流密度在 + 4V电压下为 6 .7× 1 0 -8A/cm2 ,而在- 4V电压下仅 - 5 .3× 1 0 -10 A/cm2 ,5 0℃以下该特性得以良好保持 ;撤除所施加的5V偏压后 ,经 1 0h观察 ,电容仅变化 5 % ,二极管具有较好的电容保持特性 ;在1 0 0kHz ,5V双极方波加速疲劳下 ,1 0 7次开关极化以后铁电薄膜系统几乎没有显示任何疲劳 ,经 1 0 9次极化循环 ,剩余极化Pr 仅下降 1 0 % ,矫顽电场Ec 增加 1 2 % ;2 0 0W紫外灯光辐照 2 0min后 ,尽管剩余极化和矫顽电场均有所变化 ,并产生了电压漂移 (voltageshift) ,但印迹优值因子FOM约 0 .2 ,二极管未出现印迹失效
The Au / PZT / BIT / p Si structure ferroelectric memory diode was fabricated by pulsed laser deposition (PLD) process, and the IV characteristics, capacitance retention, fatigue and imprint characteristics of the diode were investigated. The results show that the IV characteristics of the ferroelectric diode show obvious unidirectional conductivity, which shows similar characteristics to Schottky diodes. The current density is 6.7 × 10 -8 A / cm 2 at the voltage of + 4V, 4V voltage only - 5.3 × 10 ~ 10 A / cm2, 5 0 ℃ below this feature is well maintained; removal of the applied 5V bias, after 10h observation, the capacitance changes only 5%, the diode has a more Good capacitance retention characteristics; at 100 KHz, 5V bipolar square wave acceleration fatigue, after the 1 0 7 switching polarizations ferroelectric thin film system shows almost no fatigue, after 109 cycles of polarization, residual polarization Pr only decreased 10% and coercive electric field Ec increased by 12%. Although the remanent polarization and coercive electric field both changed and the voltageshift occurred after the 200w UV irradiation for 20min, The imprinted merit factor, FOM, was about 0.2, and the diode did not show imprinting failure