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我们制备无衬底氮化钽薄靶的目的,是为着用核物理背散射实验法研究工业上生产的氮化钽薄膜的钽和氮的组份比,或它们的原子比。 众所周知,阴极溅射就是在真空室中把衬底片置于阳极上,靶材钽片作为阴极。在阳极和阴极间施加直流高压后,阳极和阴极之间便产生辉光放电,使惰性气体氩气电离所产生的正离子去轰击阴极表面,使靶材表面的原子从中逸出而沉积在衬底片表面上。而反应溅射就是在这种阴极溅射的同时,在惰性气体中有意混入一定量的反应性气体来获得反应生成物薄膜。如果使用氮气为反应性气体,那么得到的就是有衬底的氮化钽薄膜。若在衬底片表面上事先喷镀一薄层脱膜剂,如NaCl、CsI、Al、Cu等。把这种反应溅射后生成的氮化钽膜连同衬底片一起放入相应的溶剂或腐蚀剂中。待脱膜剂被溶解或腐蚀后,就得到无衬底的氮化钽薄膜。
The purpose of our preparation of a substrateless tantalum nitride thin target is to investigate the component ratios of tantalum and nitrogen, or their atomic ratio, of industrially produced tantalum nitride thin films by nuclear backscattering experiments. It is well-known that cathode sputtering involves placing a substrate sheet on an anode in a vacuum chamber and a target tantalum sheet as a cathode. When a high DC voltage is applied between the anode and the cathode, a glow discharge is generated between the anode and the cathode. Positive ions generated by ionization of the inert gas are de-bombarded to the cathode surface, atoms on the surface of the target material escape therefrom to deposit on the liner On the surface of the film. In contrast, reactive sputtering is such that sputtering of a cathode produces a thin film of the reaction product by deliberately mixing a certain amount of reactive gas with the inert gas. If nitrogen is used as the reactive gas, then a substrate tantalum nitride film is obtained. If a thin layer of release agent such as NaCl, CsI, Al, Cu and the like is sprayed on the surface of the substrate sheet in advance. The tantalum nitride film formed after this reactive sputtering is placed in the corresponding solvent or etchant along with the substrate sheet. After the release agent is dissolved or corroded, a substrateless tantalum nitride film is obtained.