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应用DC(直流)反应磁控溅射设备在硅基底上制备TiO2薄膜,在固定的电源功率下,氩气流量为42.6sccm,氧流量为15sccm,溅射时间为30min的条件下,通过控制靶基距改变TiO2薄膜的光学性质。应用n&kAnalyzer1200测量,当靶基距增加时薄膜的平均反射率降低,同时反射低谷先短波后长波之后再短波;靶基距对消光系数k影响较大;随着靶基距的增加薄膜的折射率出现了下降的趋势,但当靶基距达到一定的量值时折射率的变化趋于稳定。通过XRD和SEM表征发现,随着靶基距的增加TiO2的晶体结构由金红石相向锐钛矿相转变,薄膜表面的颗粒度大小由粗大变得微小细密。
The TiO2 film was prepared on a silicon substrate by a DC reactive magnetron sputtering apparatus. Under the condition of a fixed power supply, the argon flow rate was 42.6 sccm, the oxygen flow rate was 15 sccm and the sputtering time was 30 min, The base distance changes the optical properties of TiO2 films. Using n & kAnalyzer1200 measurement, when the target base distance increases, the average reflectivity of the film decreases, while the reflection dips first short wave and then short wave and then long wave; target base distance has a greater impact on the extinction coefficient k; as the base distance increases the refractive index of the film A downward trend appears, but the change of refractive index tends to be stable when the target base distance reaches a certain value. It was found by XRD and SEM that the crystal structure of TiO2 changed from rutile phase to anatase phase with the increase of target distance, and the particle size of the membrane surface became coarse and fine.