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针对隧道再生半导体激光器,建立了内部的热源分布模型.模拟计算得到了2个有源区隧道再生半导体激光器三维稳态温度分布,分析了焊料空隙对芯片内部稳态温度分布的影响.结果表明,当芯片与焊料为理想全接触时,靠近衬底的有源区的热量积累略高于靠近热沉的有源区的热量;随着空隙的增大,焊料空隙上方靠近热沉的有源区的局部温升较快,容易引起正反馈的电热烧毁,与实验结果吻合.
For the tunneling diode laser, an internal heat source distribution model was established.The three-dimensional steady-state temperature distribution of the two active-region tunneling diode lasers was simulated and the influence of the solder void on the steady-state temperature distribution was analyzed.The results show that, When the chip and the solder are in full contact with each other, the heat accumulation in the active region close to the substrate is slightly higher than that in the active region near the heat sink. As the gap increases, the active region near the heat sink Local temperature rise faster, easily lead to positive feedback electric heat burned, consistent with the experimental results.