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本研究项目由电子部科技司下达。本工作是国内首次采用自行研制的MOCVD设备在GaAs和CdTe衬底上生长Ⅱ-Ⅵ族化合物——CdTe外延层。所采用的有机金属源——二甲基镉和二乙基碲及其包装鼓泡钢瓶,是化工部光明化工研究所首次研制成功的。
This research project was issued by the Electronics Division. This work is the first time that MOCVD equipment developed by ourselves is used to grow Ⅱ-Ⅵ compound-CdTe epitaxial layers on GaAs and CdTe substrates. The organometallic sources used - dimethyl cadmium and diethyl tellurium and its packaging bubble cylinder, is the first time the Ministry of Chemical Industry Guangming Chemical Research Institute successfully developed.