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本文提出了关系到ＩＳＦＥＴ不稳定性的三个原因：（一）Ｓｉ＿３Ｎ＿４膜表面或其缓冲溶液中。停留的羟基团是非常活泼，容易增加或失掉电子．这是氢离子敏ＦＥＴ传感器长期不稳定性的原因．（二）氢离子敏ＦＥＴ传感器的稳定性，随着ＩＳＦＥＴ的制作过程中沉淀条件而变化，这也是ＩＳＦＥＴ不稳定性的另一原因．（三）缓冲溶液的ｐＨ随着测量过程和时间而变化，这也助长了氢离子敏ＦＥＴ传感器的不稳定性，但不是ｐＨ－ＩＳＦＥＴ本身的不稳定性原因．我。们利用了再调整和控制羟氨基团比率的技术来提高ＩＳＦＥＴ的稳定性．这种改进稳定特性的技术在实践中是有效的．
In this paper, three reasons related to the instability of ISFETs are proposed: (1) Si_3N_4 membrane surface or its buffer solution. The remaining hydroxyl groups are very lively and easy to add or lose electrons. This is the reason for the long-term instability of hydrogen ion-sensitive FET sensors. (B) The stability of the hydrogen ion sensitive FET sensor, which varies with the deposition conditions during ISFET fabrication, is another reason for ISFET instability. (III) The pH of the buffer solution varies with the measurement process and time, which also contributes to the instability of the hydrogen ion sensitive FET sensor, but not the instability of the pH-ISFET itself. I. We have used techniques to readjust and control hydroxylammonium ratio to improve ISFET stability. This technique of improving the stability characteristics is effective in practice.