ＮＥＣ使用低毒性的有机金属开发ＩｎＧａＡｓＰ系激光器晶体日本ＮＥＣ使用毒性比砷化氢、磷化氢还低的ＭＯ（有机金属）原料作高性能ＩｎＧａＡｓＰ系半导体激光器的晶体生长已获得成功。过去，使用砷、磷作原料的砷化氢、磷化氢，其毒性较高，必须以高压气体形式送进薄... NEC Develops InGaAsP Series Laser Crystals Using Low Toxicity Organometallics NEC has succeeded in crystal growth using MO (organometallic) materials that are lower in toxicity than arsine and phosphine as high-performance InGaAsP-based semiconductor lasers. In the past, the use of arsenic, phosphorus as a raw material of arsine, phosphine, its higher toxicity, must be fed into the form of high pressure gas thin ...