论文部分内容阅读
对本实验室在Si(111)衬底上MOCVD法生长的芯片尺寸为400μm×600μm功率型绿光LED的光电性能进行研究。带有银反射镜的LED在20 mA的电流下正向工作电压为3.59 V,主波长518 nm,输出光功率为7.3 mW,90 mA下达到28.2 mW,发光功率效率为7.5%,光输出饱和电流高达600 mA。在200 mA电流下加速老化216 h,有银反射镜的LED光衰小于无银反射镜的LED,把这一现象归结于Ag反射镜在提高出光效率的同时,降低了芯片本身的温度。本器件有良好的发光效率、光衰和光输出饱和电流等综合特性表明,Si衬底GaN基绿光LED具有诱人的发展前景。
The photoelectric properties of a 400μm × 600μm power green LED grown by MOCVD on Si (111) substrate in our laboratory were studied. LEDs with silver mirrors operate forward at 20 mA with a 3.59 V forward voltage, a dominant wavelength of 518 nm, an output optical power of 7.3 mW, an output power of 28.2 mW at 90 mA and a luminous power efficiency of 7.5% Current up to 600 mA. Accelerated aging at 200 mA for 216 h, the LED light attenuation of the silver mirror is smaller than that of the silver mirror without the silver mirror, which is attributed to the fact that the Ag mirror reduces the temperature of the chip itself while improving the light extraction efficiency. The device has good luminous efficiency, light attenuation and light output saturation current and other comprehensive characteristics show that Si substrate GaN-based green LED has an attractive development prospects.