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本文介绍 X 波段 GaAs 功率 FET 的设计考虑、工艺特点和电特性。采用53条梳状源、52条漏和1条连接104条平行的肖特基栅的复盖栅来实现栅长1.5微米、栅宽5200微米的 FFT。研究成功了一种面接地技术,以便把共源引线电感减到最小(L_s=50微微法)。研制出的器件在10千兆赫下给出0.7瓦,8千兆赫下给出1.6瓦的饱和输出功率。在6千兆赫下,1分贝增益压缩时,线性增益为7分贝,输出功率为0.85瓦,并得到30%的功率附加效率。在6.2千兆赫下,三次互调制分量的截距为37.5分明亳瓦。
This article describes the design considerations, process characteristics, and electrical characteristics of X-band GaAs power FETs. 53 FFTs with a gate length of 1.5 microns and a gate width of 5200 microns were implemented using 53 comb sources, 52 drains, and a single cover grid connected 104 parallel Schottky gates. The study succeeded in a surface-grounded technique to minimize the common-source lead inductance (L_s = 50 pico-law). The device developed gives 0.7 W at 10 GHz and 1.6 W at 8 GHz. At 1 GHz gain compression at 6 GHz, the linear gain is 7 dB and the output power is 0.85 watts with 30% power added efficiency. At 6.2 GHz, the intercept of the three intermodulation products is 37.5 min.