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Infrared measurements have been performed on semimagnetic semiconductor HgSe:Fe with concentrations of iron from 2 ×1018cm-3 to 7×1019cm-3 in the wavelength region of 300 cm-1 to 2500 cm-1 and the temperature range from 11K to 300K, for the absorption spectra, and 300K, for the reflectivity spectra, respectively.Calculations of free carrier absorption coefficient and reflectivity based on Drude theory have also been carried out.It was found that the calculated values of both absorption coefficient and reflectivity agree very well with the measured values. This proves that Drude theory can be used to explain the free-carriers absorption and reflectivity of HgSe:Fe. Thus, the parameters of material, such as plasma frequecy, high frequency dielectric constant and damping constant, can be then obtained from the fitting of theory to experiment. Furthermore, two other physical parameters, i.e. the concentration of free carriers and effective mass averaged over energy band, can be evaluated.
Infrared measurements have been performed on semimagnetic semiconductor HgSe: Fe with concentrations of iron from 2 × 10 18 cm -3 to 7 × 10 19 cm -3 in the wavelength region of 300 cm -1 to 2500 cm -1 and the temperature range from 11K to 300K, for the absorption spectra, and 300K, for the reflectivity spectra, respectively. Calculations of free carrier absorption coefficient and reflectivity based on Drude theory have also been carried out. It was found that the calculated values of both absorption coefficient and reflectivity agree well well with This proves that Drude theory can be used to explain the free-carriers absorption and reflectivity of HgSe: Fe. Thus, the parameters of material, such as plasma frequecy, high frequency dielectric constant and damping constant, can be then from the fitting of theory to experiment. ie, two other physical parameters, ie the concentration of free carriers and effective mass averaged over energy band, can be evaluated .