自从1951年第一只面结型(生长型)晶体三极管诞生后,人们努力的方向之一是提高晶体管的高频性能.十余年来,在这方面已取得了飞跃的发展.但与电子管,特别是微波电子管相比,晶体管在高频性能(尤其是高频大功率)方面尚有逊色.这是由于晶体管的内部结构和工作机理比较复杂的缘故.在电子管内,构成电流的电子是在真空中运动,即电流的流通是依 Since the first surface-grown (growth) transistor was first introduced in 1951, one of the hardworking directions has been to improve the high-frequency performance of the transistor. In more than a decade, rapid progress has been made in this area. However, , Especially in the microwave tube, the transistor in the high-frequency performance (especially high-frequency high-power) is still inferior, which is due to the internal structure of the transistor and the working mechanism is more complex in the tube, the current forming electronic In vacuum movement, that is, the flow of electricity is by