在日本轻井(氵尺)召开的第七届超大规模集成电路(VLSI)工艺国际会议共发表53篇文章.会议主要特点为:①亚微米工艺日趋成熟:基本解决了亚微米曝光、刻蚀技术,超薄绝缘层,布线技术及其平坦化.②MOS DRAM、SRAM迅速发展.③深入讨论了热电子等器件物理和器件模型.④出现了众多新工艺、新结构,提高了VLSI的可靠性、稳定性. At the 7th VLSI International Conference held at Karuizu, Japan, a total of 53 articles were published, and the main features of the conference were as follows: ① Submicron technology matures: Submicron exposure, etching Technology, ultra-thin insulation layer, wiring technology and its planarization.②MOS DRAM, SRAM are rapidly developing.③Thirdly, the physical and device models of devices such as thermoelectronics are discussed in detail.④A lot of new techniques and structures have appeared and the reliability of VLSI has been improved ,stability.