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本文应用 PHI550型多功能电子能谱仪对两种不同条件处理的 CuBe(O)发射体材料进行深度的剖面分析。同时给出在典型离子溅射条件下(2.5KV,25mA,10~(-7)托,~(40)Ar~+)发射体不同深度的俄歇谱。分析结果表明,有大约50%的 Be、O 参与表面 BeO 层的形成。特高温度下生成 BeO 层的溅射时间小于一般活化温度下生成 BeO 层的溅射时间。在 K、Na 碱金属激活过的 CuBe 倍增器中,两种工艺制成的 BeO 发射体厚度都比激活前有所减薄。
In this paper, the PHI550 multi-functional electron spectrometer was used to conduct deep profile analysis of two different CuBe (O) emitter materials. At the same time, Auger spectra of different depths of (~ 40) Ar ~ + emitters under typical ion sputtering conditions (2.5KV, 25mA, 10 ~ (-7) The analysis results show that about 50% of Be and O are involved in the formation of the surface BeO layer. The sputtering time for forming BeO layers at ultra-high temperatures is less than the sputtering time for forming BeO layers at typical activation temperatures. In K, Na alkali-activated CuBe doublers, the thickness of the BeO emitters made by both processes is somewhat thinner than before activation.