本文比较了标准氧化法,低温氧化、高温退火的两步氧化法及中间退火的两步HCl氧化法的优缺点,从而提出了三步HCl氢化的方法。采用此种方法所制得的氧化膜耐压有所提高,界面态密度、表面电荷及缺陷密度有所下降,采用此法生长栅氧化膜制出的CMOS电路,取得了良好的结果。 In this paper, the advantages and disadvantages of the two-step oxidation method of standard oxidation, low temperature oxidation and high temperature annealing and the two-step HCl oxidation of intermediate annealing are compared, and a three-step HCl hydrogenation method is proposed. The oxide film obtained by this method has better withstand voltage, lower interface density, lower surface charge and defect density. Good results have been achieved by using this method to grow a CMOS circuit made of a gate oxide film.