测量了在蓝宝石衬底上气相外延生长GaN的拉曼散射谱。除观察到已被确认的两个E_2,一个A_1(TO)和一个E_1(TO)声于振动以外,在734±3cm~(-1)处观察到一个散射峰且从实验上确认其为GaN的纵向光学声子模E_1(LO)。而且发现其强度与外延层晶体质量密切相关。A_1(TO)和高频E_2散射峰相对强度变化显示不同生长条件引起的外延层质量的变化。 Raman scattering spectra of GaN grown by vapor phase epitaxy on a sapphire substrate were measured. In addition to the observed two E_2, one A_1 (TO) and one E_1 (TO) sound that were confirmed to be oscillatory, a scattering peak was observed at 734 ± 3 cm -1 and was experimentally confirmed to be GaN The longitudinal optical phonon modes E_1 (LO). And found that the strength of the crystal is closely related with the epitaxial layer. The changes of the relative intensities of the A_1 (TO) and the high-frequency E_2 scattering peaks show the changes of the epitaxial layer quality under different growth conditions.