论文部分内容阅读
报道了基于混合应变量子阱材料的半导体光放大器 (SOA)。利用张应变量子阱加强了TM模的增益 ,使之接近TE模的增益 ,从而使SOA的偏振灵敏度大为降低。在 150mA的偏置下 ,获得了 2 4dB的小信号增益和 1dB的偏振灵敏度。
A semiconductor optical amplifier (SOA) based on hybrid strained quantum well materials is reported. The use of a tensile strain quantum well enhances the gain of the TM mode to a value close to the gain of the TE mode, thereby greatly reducing the polarization sensitivity of the SOA. With a bias of 150mA, a small signal gain of 24dB and a polarization sensitivity of 1dB were obtained.