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铝掺杂氧化锌(ZAO)透明导电膜兼具电阻率低和透光性好的特点,在光学与光电子领域具有广阔的应用前景。本文以微米级的高纯超细ZnO和Al2O3粉体为原料,通过控制适当的素坯成型压力,烧结前增加冷等静压环节,优化烧结工艺,制备出了高致密度和低电阻率的ZAO靶材。在16 MPa的成型压力,120 MPa冷等静压,1350℃×1 h的烧结工艺下,制备出了高致密度和低电阻率的ZAO靶材,其致密度达98.0%,电阻率为1.8×10-2Ω.cm,接近于热等静压所制备出的ZAO靶材。利用自制靶材,通过射频磁控溅射法,进一步制备出了ZAO薄膜,透光率达到88.6%,最低电阻率达到2.1×10-3Ω.cm。
Aluminum doped zinc oxide (ZAO) transparent conductive film with low resistivity and good light transmission characteristics, in the field of optics and optoelectronics has broad application prospects. In this paper, micron high-purity ultra-fine ZnO and Al2O3 powder as raw material, by controlling the appropriate forming pressure of the preform, adding cold isostatic pressing before sintering, optimizing the sintering process, prepared high density and low resistivity ZAO target material. The ZAO target with high density and low resistivity was prepared under the conditions of forming pressure of 16 MPa, cold isostatic pressing of 120 MPa and sintering at 1350 ℃ for 1 h, with a density of 98.0% and a resistivity of 1.8 × 10-2Ω.cm, close to the hot isostatic pressing prepared ZAO target. ZAO film was further prepared by radio frequency magnetron sputtering method with self-made target. The light transmittance reached 88.6% and the lowest resistivity reached 2.1 × 10-3Ω.cm.