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随着集成电路的飞速发展,SiO2作为传统的栅介质将不能满足MOSFET器件高集成度的要求,需要一种新型High-k材料来代替传统的SiO2,这就要综合考虑以下几个方面问题:(1)介电常数和势垒高度;(2)热稳定性;(3)薄膜形态;(4)界面质量;(5)与Si基栅兼容;(6)工艺兼容性;(7)可靠性。本文综述了几类High-k栅介质材料的研究现状及存在的问题。目前任何一种有望替代SiO2的栅介质材料都不能完全满足上述几点要求。但是,科学工作者们已经发现了几种有希望的High-k候选材料。
With the rapid development of integrated circuits, SiO2 as a traditional gate dielectric will not meet the requirements of highly integrated MOSFET devices. A new type of High-k material is needed instead of the traditional SiO2. Considering the following problems: (1) Dielectric constant and barrier height; (2) Thermal stability; (3) Film morphology; (4) Interface quality; (5) Compatible with Si-based gate; (6) Process compatibility; Sex. This paper reviews the research status and existing problems of several high-k gate dielectric materials. At present, any one of the gate dielectric materials expected to replace SiO2 can not fully satisfy the above requirements. However, scientists have identified several promising High-k candidate materials.