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采用干涉方法研究FN振荡电流 ,得到一个精确而且简单的测量栅介质层的厚度及隧穿电子在栅介质层导带中的有效质量的表达式 .通过和求解三角势垒的薛定谔方程得到的结果比较验证了干涉方法的可行性 .干涉方法揭示电子在隧穿过程中体现了波的本性 ,这种方法的一个重要特征是它对不同形状的势垒和势阱可能均适用 .还分析了有关FN振荡电流的实验现象 ,并给出了相应的物理解释
Using the interference method to study the FN oscillating current, an accurate and simple expression for measuring the thickness of the gate dielectric layer and the effective mass of the tunneling electrons in the conduction band of the gate dielectric layer is obtained. By solving the Schrödinger equation of the triangular barrier The feasibility of the interference method is verified by comparison, and the interference method reveals that the electron reflects the nature of the wave in the tunneling process. An important feature of this method is that it may be applicable to different shape barriers and potential wells. FN oscillation current of the experimental phenomenon, and gives the corresponding physical explanation