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用电子束蒸发技术在石英衬底上制备了铝掺杂氧化锌(ZnO:Al)透明导电薄膜, 并对其退火前后的结构和光电性质进行了研究. X射线衍射实验结果表明所制备样品均具有c轴择优取向的六角多晶结构. 光致发光谱由较强的紫外发光和弱深能级缺陷发光组成. 薄膜具有较高的透射率、电导率和载流子浓度. Hall效应测试结果表明薄膜为简并n型半导体, 室温电阻率为6.7×10-4 ·cm, 载流子浓度在1020 cm-3量级. 研究了其导电机理及载流子的输运机制.
Transparent conductive films of aluminum-doped zinc oxide (ZnO: Al) were prepared on a quartz substrate by electron beam evaporation, and their structures and photoelectric properties before and after annealing were investigated. The results of X-ray diffraction Hexagonal polycrystalline structure with preferred orientation of c-axis.The photoluminescence spectrum consists of strong ultraviolet light and weak deep level defect luminescence.The film has high transmittance, conductivity and carrier concentration.Hall effect test results The results show that the film is a degenerate n-type semiconductor with a resistivity of 6.7 × 10-4 · cm and a carrier concentration of 1020 cm-3 at room temperature.The conductivity mechanism and carrier transport mechanism are studied.