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报道了针对移动通信基站应用的GaN HEMT的研制。通过采用NiAu势垒,降低器件栅极漏电,从而提高器件击穿电压。同时通过优化V型栅,降低了峰值电场,提高器件击穿电压30%以上。GaN HEMT器件设计采用双场板结构,工艺采用0.5μm栅长,工作电压50V,在2.3~2.7GHz带内峰值输出功率280 W,功率附加效率>64%,线性度-30dBc@PAR=5dB,器件抗失配比(VSWR)至5∶1,器件性能可以满足未来基站多频段多载波应用需要。可靠性试验结果表明,研制的器件在150℃下平均工作寿命(MTTF)>4×10~6 h,满足系统应用需要。
Reported the development of GaN HEMT for mobile communication base station applications. Through the use of NiAu barrier, reduce the device gate leakage, thereby increasing the device breakdown voltage. At the same time by optimizing the V-type gate, reducing the peak electric field and improve the breakdown voltage of the device more than 30%. GaN HEMT devices are designed with a dual-field plate structure with a 0.5μm gate length and operating voltage of 50V and a peak output power of 280W at 2.3 ~ 2.7GHz with power added efficiency of> 64% and linearity of -30dBc @ PAR = 5dB. Device anti-mismatch ratio (VSWR) to 5: 1, the device performance to meet the future needs of multi-band multi-carrier base station applications. The reliability test results show that the developed device has an average working life (MTTF)> 4 × 10 ~ 6 h at 150 ℃, which meets the needs of system application.