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利用微波吸收介电谱检测技术,对均匀掺杂[Ru(CN)6]4-的立方体AgCl微晶中自由和浅束缚光电子时间分辨谱进行了检测。实验结果表明,样品曝光后,光生电子数量达到极大值所需时间随掺杂浓度增加逐渐变长;且随掺杂浓度的增加,自由光电子衰减时间逐渐从未掺杂时的157ns延长至1 071ns。在分析光电子衰减曲线时发现,掺杂影响光电子的前期和后期衰减过程,主要是后期过程;且随掺杂浓度增加,光电子的前期和后期衰减都逐渐变慢。通过对比掺杂[Fe(CN)6]4-的研究结果发现,掺杂[Ru(CN)6]4-引入了浅电子陷阱(SETs),其深度较[Fe(CN)6]4-的浅。
The time-resolved spectra of free and shallow bound photoelectrons in cubic AgCl crystallites uniformly doped [Ru (CN) 6] 4 were detected by microwave absorption dielectric spectroscopy. The experimental results show that the time required for photons to reach the maximum after exposure to the sample gradually becomes longer with increasing doping concentration. With the increase of the doping concentration, the decay time of free photoelectrons gradually increases from 157ns without doping to 1 071ns. When analyzing the photoelectron decay curve, it is found that the doping affects the pre-and post-decay process of photoelectrons mainly in the late stage. With the increase of the doping concentration, the pre-and post-decay of photoelectrons gradually becomes slower. The results show that doped [Ru (CN) 6] 4- introduces shallow electron traps (SETs) with a depth of [Fe (CN) 6] 4- Shallow