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报道了可饱和吸收体Cr4+∶YAG的液相外延生长 ,对双掺杂Cr ,Ca∶YAG外延层的吸收特性进行了分析。通过对Cr离子掺杂浓度以及外延层厚度的控制 ,λ =1.0 6 4μm的饱和与非饱和透过率差ΔT可以在 5 %～ 30 %的范围内进行调节 ,满足单片式被动调Q微晶片激光器对饱和吸收体的设计要求。分析结果同时表明外延Cr,Ca∶YAG层中还有Cr5+离子的存在
The liquid-phase epitaxial growth of saturable absorber Cr4 +: YAG was reported, and the absorption characteristics of doping Cr, Ca:YAG epitaxial layers were analyzed. By controlling the doping concentration of Cr ions and the thickness of the epitaxial layer, the difference ΔT between saturation and non-saturation transmittance of λ = 1.0 6 4μm can be adjusted in the range of 5% ~30% to satisfy the single-chip passive Q- Design requirements of a saturable absorber for a chip laser. The analysis also shows the presence of Cr5 + ions in the epitaxial Cr, Ca: YAG layers