论文部分内容阅读
离子注入用于CMOS/SOS 工艺具有许多潜在的优点:(1)它只需要一次外延硅薄膜生长,且在外延期间无需进行掺杂而生产成本征型;(2)可以精确地控制掺杂杂质的数量和掺杂深度分布.与常规的掺杂,扩散相比,均匀性和重复性好,从而器(?)特性的一致性好;(3)因退火均在较低温度下进行,因而有利于真正的实现低温工艺,这对SOS 结构来说是十分重要的,它克服了因高温过程带来的诸如自掺杂等问题的影响.此外,它在改善SOS 膜结晶质量(即注入硅离子的固相外延技术)和抑制背沟道漏电流(即深硼离子注入)方面都是最重要的工艺途径.一、全离子注入的CMOS/SOS 工艺CMOS/SOS 电路系采用全离子注入的自对准掺磷多晶硅栅工艺制作的,整个工艺过程共有五次离子注入:1.衬底注入掺杂:我们采用本征SOS 片,用两次注入的方法分别形成p-岛和n~- 岛。p-岛注硼.能量为70keV,剂量为2×
Ion implantation for CMOS / SOS processes has many potential advantages: (1) it requires only one epitaxial silicon film growth, and does not require doping during epitaxy to produce a charge-type; (2) can accurately control the doping impurities And the depth of doping. Compared with the conventional doping and diffusion, the uniformity and repeatability are good, and the consistency of the characteristics of the device (?) Is good. (3) Since the annealing is performed at a lower temperature, Is conducive to the real realization of low temperature process, which is very important for the SOS structure, it overcomes the high temperature process brought about such as self-doping and other issues.In addition, it improves the SOS film quality (ie, silicon Ion solid-state epitaxy) and back-channel leakage suppression (ie, deep boron ion implantation) are the most important process pathway. First, the whole ion implantation CMOS / SOS process CMOS / SOS circuit using all ion implantation Self-aligned phosphorus-doped polysilicon gate process, the entire process a total of five ion implantation: 1. Substrate implantation doping: We use the intrinsic SOS film, using two injection methods were formed p- and n ~ island. p-island boron injection energy of 70keV, a dose of 2 ×