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制备了一种具有多级存储效应的密集ZnO纳米棒阵列阻变存储器件,借助I-V曲线和荧光光谱分析了器件的电流传导机制和阻变机制,发现器件在不同的电阻态下分别属于欧姆传导和空间电荷限制电流(SCLC)传导机制。正向电场作用使纳米棒表面耗尽区的氧空位V++密度增大,完善了电子传输的导电细丝通道,器件实现了由高阻态向低阻态的转变;在反向电压作用下,导电通道断裂,器件恢复到高阻态。
A dense ZnO nanorod array resistive memory device with multi-level memory effect was fabricated. The current conduction mechanism and resistance change mechanism of the device were analyzed by IV curve and fluorescence spectroscopy. It was found that the devices belong to ohmic conduction in different resistance states And space charge-limited current (SCLC) conduction mechanism. The forward electric field increases the V ++ density of oxygen vacancies in the depletion region on the surface of the nanorods and improves the conductive filament passage for the electron transport. The device achieves the transition from the high resistance state to the low resistance state. Under the action of reverse voltage, The conductive channel breaks and the device returns to high impedance.