在半导体工艺中各种外延生长的薄膜,以及各种氧化薄膜(如SiO_2),氢化薄膜(如SiH)等厚度的测量,目前一般用金相显微镜法,但是测量前样品必需经过化学腐蚀,是一种有损测量法。我们根据薄膜干涉原理,利用红外光谱仪,很简便的、快速的、无损的测量了各种薄膜厚度。原理及计算公式入射光束I_0由空气射到薄膜表面,反射光束R_1和R_0之间的光程差为(见图1): In the semiconductor process, a variety of epitaxial growth of thin films, as well as a variety of oxide films (such as SiO 2), hydrogenated films (such as SiH) thickness measurement, the general use of metallographic microscopy, but before the sample must be subjected to chemical etching, is A loss measurement. According to the principle of film interference, we use infrared spectrometer to measure various film thicknesses easily, quickly and nondestructively. Principle and calculation formula Incident beam I_0 is shot by the air to the surface of the film. The optical path difference between the reflected beams R_1 and R_0 is (see Fig. 1):