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用 x 射线双晶衍射仪研究了(001),InP 衬底上生长的 InGaPAs外延层在垂直及平行于异质界面方向上的晶格失配。观察到在(001)生长方向上晶格常数随四元外延层厚度变化,而横向上却没有晶格失配。发现四元外延层 x 射线回摆曲线大的半值宽度归因于沿厚度方向晶格常数的变化。
The lattice mismatch of InGaPAs epitaxial layers grown on (001) and InP substrates in the direction perpendicular to and parallel to the hetero-interface was investigated by x-ray double crystal diffractometry. It is observed that the lattice constant in the (001) growth direction varies with the quaternary epitaxial layer thickness without lattice mismatch in the horizontal direction. It was found that the large half width of the quaternary epitaxial layer x-ray backswing curve is attributed to the variation of the lattice constant in the thickness direction.