为实现TSV硅衬底表面铜去除速率的优化,对影响TSV铜去除速率的最主要因素抛光液组分(如磨料、螯合剂、活性剂和氧化剂)中的氧化剂进行分析。通过对不同体积分数的氧化剂电化学实验进行钝化机理的研究,从而得到最佳的氧化剂体积分数,再进行铜的静态腐蚀实验和抛光实验对铜的去除速率进行验证。实验结果表明,氧化剂体积分数为0.5%时铜具有较高的去除速率,能够满足工业需要。最后,对CMP过程机理和钝化机理进行分析,进一步验证了氧化剂在TSV铜化学机械平坦化中的作用。 To optimize the copper removal rate on the surface of TSV silicon substrates, the oxidants in the polishing solution components (eg, abrasives, chelating agents, active agents, and oxidizers), the most important factor affecting the copper removal rate of TSVs, were analyzed. Through the study of passivation mechanism of oxidant electrochemical experiments with different volume fraction, the best oxidant volume fraction was obtained. Then the copper static corrosion test and polishing experiment were carried out to verify the copper removal rate. The experimental results show that when the volume fraction of oxidant is 0.5%, the copper has high removal rate and can meet the industrial needs. Finally, the CMP process mechanism and passivation mechanism were analyzed to further verify the role of oxidant in chemical mechanical planarization of TSV copper.