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对自行研制的低温晶体管于液氮温度下进行了低频噪声测量，结果表明：与室温相比１／ｆ噪声显著增大．根据１／ｆ噪声理论，并参照器件室温和低温下ＩＢ～ＶＢＥ曲线的不同，认为在低温下ＥＢ结正向压降增大和载流子的冻折效应是使该器件１／ｆ噪声等效输入电流功率谱密度变大的主要原因．
Low-frequency noise measurement was carried out on a self-developed cryogenic transistor at liquid nitrogen temperature. The results show that the 1 / f noise is significantly increased compared to room temperature. According to the 1 / f noise theory, and with reference to the IB ~ VBE curve at room temperature and low temperature of the device, it is considered that the increase of EB junction forward voltage drop and the freezing-folding effect of carriers at low temperature make the device 1 / f noise equivalent Input current power spectral density is the main reason for the increase.