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Preparation and characteristics of indium tin oxide (ITO) thin films at low temperature by r.f. magn
[期刊论文] 作者：REN Bingyan LIU Xiaoping WANG,
来源：稀有金属：英文版 年份：2006
Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. Magnetron sputtering. ITO fil...
Preparation and characteristics of indium tin oxide (ITO) thin films at low temperature by r.f. magn
[期刊论文] 作者：REN Bingyan,LIU Xiaoping,WANG,
来源：稀有金属（英文版） 年份：2004
Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. Magnetron sputtering. ITO fil...
[期刊论文] 作者：REN Bingyan YANG Jiankun LI Ya,
来源：稀有金属：英文版 年份：2006
The pulling rate in czochralski silicon (CZSi) growth is important for reducing the cost of solar cell.In this paper, double-heater, heat shield and composite a...
Effects of argon gas flow rate and guide shell on oxygen concentration in Czochralski silicon growth
[期刊论文] 作者：REN Bingyan,ZHAO Long,ZHAO Xiu,
来源：稀有金属：英文版 年份：2006
φ 2 00 公里硅单身者晶体在φ 4 被种 50 公里 aCzochralski (CZ ) 的热地区炉子。由修改模式和氩流动的速度，有不同的氧集中的硅壁炉晶体被获得。通过数字模拟，氩气体流动的...
[期刊论文] 作者：REN Bingyan WANG Minhua LIU Xi,
来源：稀有金属：英文版 年份：2006
Hydrogen is a ubiquitous element in semiconductor processing and particularly inamorphous and microcrystalline silicon where it plays a crucial role in the grow...
[期刊论文] 作者：Ren Bingyan Gou Xianfang Ma Li,
来源：中国稀土学报：英文版 年份：2006
The effects of thermal annealing on oxygen behavior and carrier lifetimes of mc-Si wafers were investigated by means of FTIR and QSSPCD during single step and t...
[期刊论文] 作者：Ren Bingyan,Liu Caichi,Hao Qiu,
来源：稀有金属 年份：2004
New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleaning. Their annealing behavior was studied...
[期刊论文] 作者：REN Bingyan,WANG Minhua,LIU Xi,
来源：稀有金属（英文版） 年份：2004
Hydrogen is a ubiquitous element in semiconductor processing and particularly inamorphous and microcrystalline silicon where it plays a crucial role in the grow...
[期刊论文] 作者：Ren Bingyan,Gou Xianfang,Ma Li,
来源：稀土学报（英文版） 年份：2004
The effects of thermal annealing on oxygen behavior and carrier lifetimes of mc-Si wafers were investigated by means of FTIR and QSSPCD during single step and t...
[期刊论文] 作者：REN Bingyan,YANG Jiankun,LI Ya,
来源：稀有金属 年份：2004
The pulling rate in czochralski silicon (CZSi) growth is important for reducing the cost of solar cell.In this paper, double-heater, heat shield and composite a...
[期刊论文] 作者：Ren Bingyan,Liu Caichi,Hao Qiuyan,Zhang Zhicheng,Wang Haiyun,
来源：稀有金属(英文版) 年份：2000
New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleaning. Their annealing behavior was studied...
Effects of argon gas flow rate and guide shell on oxygen concentration in Czochralski silicon growth
[期刊论文] 作者：REN Bingyan,ZHAO Long,ZHAO Xiuling,WANG Huixian,CAO Zhongqian,ZHU Huimin,FU Hongbo,
来源：稀有金属（英文版） 年份：2006
φ200 mm silicon single crystals were grown in the φ450 mm hot zone of a Czochralski (CZ) face. By modifying the patt and the velocity of the argon flow, the s...
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