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[期刊论文] 作者：Junkang Li,Yiming Qu,Siyu Zeng,Ran Cheng,Rui Zhang,Yi Zhao,
来源：中国物理快报（英文版） 年份：2018
Ge complementary tunneling field-effect transistors (TFETs) are fabricated with the NiGe metal source/drain (S/D) structure.The dopant segregation method is emp...
[期刊论文] 作者：Ran CHENG,Ying SUN,Yiming QU,Wei LIU,Fanyu LIU,Jianfeng GAO,Nuo XU,Bing CHEN,
来源：中国科学：信息科学（英文版） 年份：2021
Dear editor,rnIn recent years,novel MOSFET structures such as fully-depleted silicon-on-insulator(FDSOI)MOSFET and Fin-FET are adopted by the industry for their excellent elec-trostatic behavior and higher on-state current per footprint.Nev......
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