Breakdownvoltage相关论文
An analytical model of the power metal-oxide-semiconductor field-effect transistor (MOSFET) with high permittiv-ity insu......
Diamond has high potential as efficient cold cathode materials and low-environmental load material.We have investigated ......
Amorphous metal oxides semiconductors,particularly InGaZnO(IGZO),have attracted great attention due to their superior pr......
提出一种改善n型横向双扩散金属氧化物半导体(NLDMOS)器件性能的工艺方法。该方法基于某公司0.18μm标准工艺流程, 通过在NLDMOS的......
利用Zn扩散方法制备了倍增层厚度为1.5,1.0,0.8 μm的In0.53Ga0.47As/InP雪崩光电二极管(APDs),研究了该器件特性。随着倍增层厚度......
利用流体模型对ArF准分子激光气体放电过程进行了数值模拟，通过对比不同初始预电离强度下的气体放电情况，分析了预电离效应对准分子......
对击穿后的导光管式高隔离电压光电耦合器的内部损伤痕迹的研究表明, 高电压下器件内部的局部放电引起的持续烧蚀导致了前后级之间......
A novel terminal-optimized triple RESURF LDMOS (TOTR-LDMOS) is proposed and verified in a 0.25-μm bipolar-CMOS-DMOS (BC......
A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SU
A new SOI (Silicon On Insulator) high voltage device with Step Unmovable Surface Charges(SUSC) of buried oxide layer and......
This article investigates an improved 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor (MOS-FET) (UM......
对硅片直接键合方法制作的SOI横向二极管的击穿特性在不同条件下进行了测量，通过计算机模拟分析了击穿机理，从器件的几何尺寸和衬底......
本文给出了２００Ｋ到１０Ｋ低温下，硅双极晶体管击穿电压随温度面变化的实验结果，建立了理论模型，并对实验结果作出合理解释。......
