N-Well 相关硕士博士期刊学术论文 - 信丰网

N-Well相关论文

LV/HV N-Well BCD[B]技术（2）的芯片与制程剖面结构

LV/HV N-Well BCD[B]技术（2）能够实现MOS器件低压5 V与高压100～700 V （或更高）和双极型器件低压5 V与高压30～100 V兼容的BCD工艺。为了便......

期刊

集成电路制造偏置栅结构 LV/HV N-Well BCD[B]技术制程剖面结构 integrated circuit manufacturing bias

A Scalable Model of the Substrate Network in Deep n-Well RF MOSFETs with Multiple Fingers

A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number of fingers is pres......

期刊

DEEP N-Well (DNW) RF MOSFETS Substrate Network SCALABLE Model Deep N-Well (DNW)

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