Parasitic相关论文
To deal with the invalidation of commonly employed series model and parallel model in capacitance-voltage(C-V)characteri......
Civets are alluring nocturnal carnivores having variant external features with different coat colors, stripes and spots,......
Cutaneous larva migrans(CLM) represents the most common tropically acquired dermatosis.CLM is caused by infection with h......
Effects of Temperature on Functional Response of Anagrus nilaparvatae Pang et Wang (Hymenoptera:Myma
Understanding the temperature affecting parasitic efficiency is critical to succeed in utilizing parasitoid as natural e......
Synthesis, Crystal Structure and Anti-parasitic Activity of 2-(2-Methoxy-4-nitrophenylcarbamoyl)phen
The title compound 2-(2-methoxy-4-nitrophenylcarbamoyl)phenyl-4’-fluorobenzoate (C21H15FN2O6, Mr=410.35), a fluorine-co......
Impactof Device Architecture on Performance and Reliability of Deep Submicron SOI MOSFETs( invited p
The main electrical properties of advanced Silicon On Insulator MOSFETs are addressed. The subthreshold and high field......
Inhibitory Effect of Garlic, Clove and Carrot on Growth of Aspergillus Flavus and Aflatoxin Producti
The inhibitory effeet of crude extracts of garlic, clove and carrot at concentrations of 20,000, 40,000,60,000, 80,000 a......
报道了一种新结构的功率栅控晶闸管 ,称其为槽栅 MOS控制的晶闸管 (TMCT) .在该器件结构中 ,采用 U-MOS控制晶闸管的开启和关闭 .......
The hot-carrier-induced oxide regions in the front and back interfaces are systemati-cally studied for partially deplet......
为了克服传统 SOI器件的浮体效应和自热效应 ,采用创新的工艺方法将低剂量局域 SIMOX工艺及传统的CMOS工艺结合 ,实现了 DSOI结构......
An accurate and broad|band method for heterojunction bipolar transistors (HBT) small|signal model parameters|extraction ......
提出了一个提高PDSOI nMOSFETs可靠性的方法,并且研究了这种器件的热载流子可靠性。这种方法是在制造器件中,进行背沟道注入时只注......
On String Stable Control of Platoon of Automated Vehicles with Predecessor-successor Information Fra
For the constant distance spacing policy,the existing researches of the string stability focus on the single-predecessor......
This paper considers the frequency-quadrupling three-cavity gyroklystrons with successive frequency-doubling in each cav......
An improved dual-channel 4H-SiC MESFET with high doped n-type surface layer and step-gate structure is proposed, and the......
A zero-pole cancellation transimpedance amplifier(TIA)has been realized in 0.35μm RF CMOS technology for Gigabit Ethern......
Based on the high frequency techniques such as frequency response measurement,equivalent circuit modeling and packaging ......
The accurate extraction of AlGaN/GaN HEMT small-signal models,which is an important step in largesignal modeling,can exa......
A diode-pumped Nd:YAG oscillator laser with an end-pumped zigzag slab architecture and weak pump absorption is developed......
A capacitor-free CMOS low-dropout (LDO) regulator for system-on-chip (SoC) applications is pre- sented. By adopting AC-b......
A new mixed-integrator-based bi-quad cell is proposed.An alternative synthesis mechanism of complex poles is proposed co......
A comprehensive consideration of bias voltage and temperature to extract the intrinsic frequency res
Frequency response is one of the most important characteristics of photodiode (PD). The upper limitation of the bandwidt......
As feature size keeps scaling down,process variations can dramatically reduce the accuracy in the estimation of intercon......
A novel scalable model for multi-finger RF MOSFETs modeling is presented.All the parasitic components, including gate re......
A CMOS analog equalizer is designed to meet the different high speed communication specifications,such as USB 2.0,PCI-E ......
As integrated circuits (IC) technologies advance into very-deep-sub-micron (VDSM), electrostatic discharge (ESD) failure......
针对高速锗硅异质结双极性晶体管,在基于HICUM模型的基础上,建立了HICUM可缩放模型,并且在ADS和Hspice中都得到了很好的应用。可缩......
A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used ......
Electrostatic discharge (ESD) induced parasitic effects have serious impacts on performance of radio frequency (RF) inte......
A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors(HEMTs) is proposed for accurate pr......
Based on the requirements of the nonvolatile memories embedded in ultra low-power RFID transponders, a novel voltage-typ......
DC I-V output,small signal and an extensive large signal characterization(load-pull measurements) of a GaN HEMT on a SiC......
This paper presents a variable gain low-noise amplifier(VG-LNA) for 5 GHz applications.The effect of the input parasitic......
The physical mechanisms triggering electrostatic discharge(ESD) in high voltage LDMOS power transistors (>160 V) under t......
This paper studies the dispersion characteristics of a modified photonic band-gap slow-wave structure with an open bound......
Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer
An improved 4H-SiC metal-semiconductor field-effect transistors (MESFETs) with step p-buffer layer is proposed,and the s......
The characteristics of a low-voltage triggering silicon-controlled rectifier(LVTSCR) under a transmission line pulse(TLP......
Impact of the displacement damage in channel and source/drain regions on the DC characteristics degr
This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deep-submicron......
A low-voltage triggering silicon-controlled rectifier(LVTSCR),for its high efficiency and low parasitic parameters,has m......
Radiation experiments have been carried out with a SOI NMOSFET.The behavior of double humps was studied under irradiatio......
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.T......
The ability of high-voltage power MOSFETs to withstand avalanche events under different temperature conditions are studi......
Two different LNA design techniques,namely the classical two-port technique and the Shaeffer technique, have been introd......
This paper presents a CMOS G_m-C complex filter for a low-IF receiver of the IEEE802.15.4 standard.A pseudo differential......
[Objective] To study the characteristics of seeds dormancy and germination, so as to better understand parasitic growth ......
Criterion for the second snapback of an LDMOS with an embedded SCR is given based on parasitic parameter analysis.Accord......
In this paper,a new method is proposed to study the mechanism of charge collection in single event transient (SET) produ......
