VAPOUR相关论文
<正> From analyses of observation data it is found that stratification is usually unstable in the moist adiabatic proces......
Preparation of TiO_2 thin films by MOCVD method is presented in this paper. A MOCVD system has been designed and built.......
It seems that no autumn elsewhere is more beautifulthan that in Canada.October is the most beautiful season in Canada,ac......
We demonstrate efficient four-wave mixing with an intensity conversion efficiency of nearly 100% in theory without consi......
Electrospray,as a liquid source supply system,has been applied to chemical vapour deposition(CVD).In thermal CVD,the mic......
There are great needs for real-time detection of volatile organic amines(VOA)through low-cost detection methods in publi......
Vapour–Liquid Equilibrium for N,N-Dimethylformamide + Benzene + Thiophene via Gibbs Ensemble Molecul
The selection and design of an optimal solvent for extractive distillation require reliable vapour-liquid phase equilibr......
一、解析本单元主要要求学生掌握水循环以及植物种植过程。因为内容比较抽象,所以教师可适当结合具体生活情景进行教学。在教学过......
A simple model on the heat conduction of solid-state laser pumped longitudinally is put forward. The temperature distrib......
THE GROWTH OF SINGLE CRYSTALS OF (L-ARGININE)~(B_0) BOVINE INSULIN AND THEIR PRELIMINARY X-RAY CRYST
The crystals of (L-Arg)~(B_0) bovine insulin large enough for X-ray structure analysis havebeen grown by vapour diffusi......
Niobium(V) ethoxide(Nb(OEt)5) was synthesized by electrochemical reaction of ethanol with niobium plate as the sacrifici......
The Sublimation method so far extensively used in growing large boulesof ZnSe from vapour phase has been improved by so......
Net water vapour exchange over a mixed needle and broad-leaved forest in Changbai Mountain during au
Water vapour and CO_2 fluxes were measured by the eddy-covariance technique above amixed needle and broad-leaved forest ......
在工具钢制件上,借助化学气相沉积法(Chemical vapour depoeition,简称CVD法)涂镀厚度≤10微米的如TiC或Ti N耐磨薄层,便能显著提......
A sealed-off CuBr vapour laser with the maximal average output laser power of 20 W was fabricated and investigated.The c......
ZnS films were successfully grown by metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure on (100)Ga......
Optical Emission Spectroscopy of Electron Cyclotron Resonance-Plasma Enchanced Metalorganic Chemical
An investigation was made into the nitrogen-trimethylgallium mixed electron cy-clotron resonance (ECR) plasma by optica......
ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition (MOCVD) at different to......
The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced che
This paper reports that the intrinsic microcrystalline silicon (μc-Si:H) films are prepared with plasma enhanced chemic......
In this paper, the compositions in a laser absorption region can be determined from the experiment of laser impulse coup......
Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted re
A new preparing technology,very high frequency plasma assisted reactive thermal chemical vapour deposition (VHFPA-RTCVD)......
A chemical vapour deposition (CVD) diamond film detector was prepared and the main characteristics for pulsed proton det......
The self-assembled InAs/GaAs quantum dots(QDs)with extremely low density of 8×10~6 cm~(-1)are achieved using higher gro......
Evolution of chemical bonding configurations for the films deposited from hexam-ethyldisiloxane(HMDSO)diluted with H_2 ......
Low pressure metalorganic chemical vapour deposition(LP-MOCVD) growth and characteristics of InAsSb on(100) GaSb substra......
We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapour phase epitaxy(MOVPE)......
This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxyni- tride (......
Electromagnetic field distribution in the vertical metal organic chemical vapour deposition (MOCVD) reactor is simulated......
This paper investigates a simplified metal induced crystallization(MIC) of a-Si,named solution-based MIC(S-MIC).The nick......
Deposition of nanocrystalline silicon (nc-Si) on glass at very low temperatures byelectron cyclotron resonance (ECR) pl......
Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscat
A 240-nm thick Al_(0.4)In_(0.02)Ga_(0.58)N layer is grown by metal organic chemical vapour deposition,with an over 1-μm......
Effects of SiN_x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mob
SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper,......
SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier dio
This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates wit......
Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN h
This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated......
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si(111) su
We present the growth of GaN epilayer on Si(111) substrate with a single AlGaN interlayer sandwiched between the GaN epi......
The growth of GaP layer on GaN with and without buffer layers by metal-organic chemical vapour deposition (MOCVD) has be......
Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield o......
In this work, enhanced poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) bulkheterojunction ......
This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs me......
Graded index broadband antireflection coating prepared by glancing angle deposition for a high-power
This paper reports that SiO2 is selected to fabricate broadband antireflection(AR) coatings on fused silica substrate by......
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN x interlayer grown......
This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al2O3 by metal-organic chemical va......
In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperatur......
The NaCl-H_2O binary system is a major component of solutions coexisting with ores. Observation ofsaturated solutions o......
The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-p......
Formation of rippled surface morphology during Si/Si(100) epitaxy by ultrahigh vacuum chemical vapou
The Si epitaxial films are grown on Si (100) substrates using pure Si 2 H 6 as a gas source using ultrahigh vacuum chemi......
In this paper,we report a feasible route of growing epitaxial graphene on 4H-SiC (0001) substrate in a low pressure of 4......
