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研究了掺磷双层多晶硅 RCA器件和电路的制备工艺及其温度特性 .在工艺中采用自对准双极结构 ,生长一层 RCA超薄氧化层 ,并用快速热退火处理 RCA氧化层 .研制的多晶硅发射区 RCA晶体管不仅具有较低的电流增益 -温度依赖关系 ,而且还具有较快的工作速度 .首次制备出多晶硅发射区 RCA ECL静态二分频器在室温下其工作频率为 1.1— 1.2 GHz,在液氮温度下能够正常工作 ,工作频率可达 730 MHz.
The preparation technology and temperature characteristics of phosphorus-doped bilayer polycrystalline silicon (RCA) devices and circuits were studied.The self-aligned bipolar structure was used in the process to grow an RCA thin oxide layer and to anneal the RCA oxide layer by rapid thermal annealing Polysilicon emitter RCA transistor not only has a lower current gain-temperature dependence but also has a faster operating speed. The polysilicon emitter RCA ECL static frequency divider was first fabricated at room temperature and its operating frequency was 1.1-1.2 GHz , Can work under liquid nitrogen temperature, the working frequency can reach 730 MHz.