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我们研究了与InP衬底晶格匹配的GaInAs/AlInAs三元材料多量子阱异质结构的光学性质,测量了不同阱宽量子阱在低温下的吸收光谱、光致发光及其激发光谱,以及吸收光谱随温度的变化.所测样品的光致发光峰主要取决于与缺陷态有关的跃迁过程,但吸收光谱中直到室温仍观察到重轻空穴的本征激子峰.吸收光谱线形明显地反映了多量子阱中电子态的二维特性.对不同量子阱中各子带间跃迁能量因温度上升而产生的红移进行了测定和分析.用Kronig-Penney模型对子带能量所作的计算表明,为了与测量到的跃迁能量获得满意的拟合,必须在计算中计入导带和价带的非抛物线性效应.我们结合光学性质和X光双晶衍射测量,对层厚、应变和组份均匀性等样品结构参量进行了分析.
We investigated the optical properties of a GaInAs / AlInAs ternary material multi-quantum well heterostructure lattice-matched to an InP substrate and measured the absorption, photoluminescence and excitation spectra for different well width quantum wells at low temperatures, and Absorption spectrum changes with temperature.The photoluminescence peak of the sample under test mainly depends on the transition state related to the defect state, but the intrinsic exciton peak of the heavy light hole is still observed in the absorption spectrum up to room temperature. Reflects the two-dimensional characteristics of the electronic states in the multi-quantum well. The red-shift of the transition energy between the sub-bands in different quantum wells due to the temperature rise is measured and analyzed. The Kronig-Penney model Calculations show that in order to obtain a satisfactory fit to the measured transition energies, the non-parabolic effects of the conduction band and the valence band must be taken into account in the calculation. Combining the optical properties and X-ray twinning diffraction measurements, And component uniformity of the sample structure parameters were analyzed.