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分析并设计了一种利用高选择自停止的多孔硅牺牲层技术制作压阻式加速度传感器的工艺 ,并利用外延单晶硅作为传感器的结构材料 ,这种工艺能精确地控制微结构的尺寸 .利用多孔硅作牺牲层工艺 ,使用加入硅粉和(NH4 ) 2 S2 O8的 TMAH溶液通过在薄膜上制作的小孔释放多孔硅 ,能很好地保护未被覆盖的铝线 .该工艺和标准的 CMOS工艺完全兼容 .
A process of making piezoresistive accelerometers using high-stop-to-stop porous silicon sacrificial layer technology and the use of epitaxial single-crystal silicon as the structural material of the sensor are analyzed and designed. This process can precisely control the size of the microstructures. Using porous silicon as a sacrificial layer process, uncoated aluminum wire is well protected by adding TMAH solution of silica fume and (NH 4) 2 S 2 O 8 through small holes made in the film. This process and standard CMOS process is fully compatible.