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分别用稀盐酸、王水以及(NH4)2S溶液处理p-GaN表面,通过测试样品表面O1s的X射线光电子能谱(XPS),比较了这些溶液去除p-GaN表面氧化层的能力;在经不同溶液处理后的样品表面,以相同的条件制作Ni/Au电极,并测试其与p-GaN的比接触电阻,结果表明经稀盐酸处理后的样品表面,由于其氧含量较高,不能与Ni/Au形成良好的欧姆接触,而经王水和(NH4)2S溶液处理后的p-GaN表面,能与Ni/Au形成良好的欧姆接触;最后,通过比较样品表面的Ga/N原子浓度比,探讨了王水处理p-GaN表面能够形成良好欧姆接触的原因.
The surface of p-GaN was treated with dilute hydrochloric acid, aqua regia and (NH4) 2S solution, respectively. The X-ray photoelectron spectroscopy (XPS) of O1s on the sample surface was used to compare the abilities of these solutions to remove the oxide layer on the surface of p- The Ni / Au electrodes were fabricated under the same conditions and the specific contact resistance with p-GaN was tested on the surface of the samples treated with different solutions. The results showed that the sample surface treated with dilute hydrochloric acid could not react with Ni / Au forms a good ohmic contact, while the p-GaN surface treated with aqua regia and (NH4) 2S solution can form good ohmic contact with Ni / Au. Finally, by comparing the Ga / N atomic concentration The reason for the formation of good ohmic contact between the aqua regia and the p-GaN surface was discussed.