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用电子自旋共振（ＥＳＲ）方法研究了含纳米晶粒：ａ－Ｓｉ：Ｈ薄膜的缺陷态．这种薄膜是用等离子体增强ＣＶＤ方法制备而成，未经任何后处理过程，在室温观察到可见光范围的光致发光．薄膜的ＥＳＲ谱由三个部分组成：（１）一对轴向对称超精细谱线，其ｇ∥＝１．９９６７，ｇ⊥＝２．００１６，其超精细常数为１．２×１０－２Ｔ；（２）一条各向同性谱线，其ｇ＝２．００５２．线宽△Ｈｐｐ＝１×１０－３Ｔ；（３）一条轴向对称谱线，其ｇ∥＝２．００５７，ｇ⊥＝２．００４２．以上三部分分别来源于三个不同的顺磁中心本文分析了它们的产生，所对应的顺磁缺陷密度与样品制备条件以及光致发光强度之间的关系．
Electron spin resonance (ESR) method was used to investigate the defect state of nanocrystalline grains: a-Si: H thin films. This thin film was prepared by a plasma-enhanced CVD method without any post-treatment process and a photoluminescence in the visible range was observed at room temperature. The ESR spectrum of the film is composed of three parts: (1) a pair of axially symmetric hyperfine lines with g∥ = 1.9967 and g⊥ = 2.0016 with hyperfine constants of 1.2 × 10-2T ; (2) an isotropic spectrum with g = 2.0052. Linewidth △ Hpp = 1 × 10-3T; (3) An axisymmetric spectral line, its g∥ = 2.0057, g⊥ = 2.0042. The above three parts are derived from three different paramagnetic centers respectively. In this paper, the generation of paramagnetic defects, the corresponding paramagnetic defect density, the sample preparation conditions and the relationship between the photoluminescence intensities are analyzed.